Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area
Reexamination Certificate
2008-05-06
2008-05-06
Nguyen, Nam (Department: 1795)
Electrolysis: processes, compositions used therein, and methods
Electrolytic coating
Coating selected area
C205S324000
Reexamination Certificate
active
11050790
ABSTRACT:
A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.
REFERENCES:
patent: 1949131 (1934-02-01), Shields
patent: 3320484 (1967-05-01), Riley et al.
patent: 3634203 (1972-01-01), McMahon et al.
patent: 3827949 (1974-08-01), Platter et al.
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4460413 (1984-07-01), Hirata et al.
patent: 4564720 (1986-01-01), Hogan
patent: 5032237 (1991-07-01), Wieserman et al.
patent: 5196361 (1993-03-01), Ong et al.
patent: 6224735 (2001-05-01), Akutsu et al.
patent: 6309969 (2001-10-01), Oskam et al.
patent: 6707100 (2004-03-01), Gajda
patent: 6797145 (2004-09-01), Kosowsky
patent: 6899815 (2005-05-01), Coomer et al.
patent: 7105886 (2006-09-01), Droopad
patent: 2003/0155246 (2003-08-01), Schimmel et al.
patent: 2003/0201442 (2003-10-01), Makita
Basker Veeraraghavan S.
Cabral, Jr. Cyril
Cooper Emanuel I.
Deligianni Hariklia
Frank Martin M.
Connolly Bove Lodge and Hutz
International Business Machines - Corporation
Nguyen Nam
Trepp Robert M.
Van Luan V.
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