Gate resistor for IGBT

Details Gate resistor for IGBT Gate resistor for IGBT

1995-09-19

1997-01-07

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257140, 257146, 257154, 257334, 257536, 257538, H01L 2976, H01L 2974, H01L 2994, H01L 2900

Patent

active

055920063

ABSTRACT:
A polysilicon gate resistor consists of a plurality of parallel polysilicon strips extending from gate finger to gate pad. Different numbers of parallel strips can be selected during manufacture by using different contact masks.

REFERENCES:
patent: 4495513 (1985-01-01), Descamps

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