Gate protection diode for high-frequency power amplifier

Details Gate protection diode for high-frequency power amplifier Gate protection diode for high-frequency power amplifier

2011-04-26

2011-04-26

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27016

Reexamination Certificate

active

07932562

ABSTRACT:
A high-frequency power amplifier of the type to be mounted in an RF module for mobile phones having high-frequency power field effect transistors and gate protective diodes which are coupled between the gates and the sources of the high-frequency power field effect transistors. The gate protective diodes have an n type region formed over the main surface of a p type epitaxial layer, a first p type region formed at the center of the main surface of the n type region, a second p type region formed over the main surface of the epitaxial layer around the n type region from the periphery of the main surface of the n type region, and p+type buried layers for coupling the second p type region to a substrate body. The distance between the end portions of the p+type buried layers and the n+type region is 7 μm or more.

REFERENCES:
patent: 6346728 (2002-02-01), Inoue et al.
patent: 6933559 (2005-08-01), Van Roijen et al.
patent: 2007/0114606 (2007-05-01), Hoshino et al.
patent: 2001-094094 (2001-04-01), None
patent: 2003-509867 (2003-03-01), None

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