Gate oxide voltage limiting devices for digital circuits

Details Gate oxide voltage limiting devices for digital circuits Gate oxide voltage limiting devices for digital circuits

1996-02-12

1999-04-06

Santamauro, Jon

Electronic digital logic circuitry

Interface

Supply voltage level shifting

326 68, 326 83, H03K 190185

Patent

active

058923713

ABSTRACT:
An oxide protection circuit prevents failure of the MOS transistors in a digital device. A voltage difference at a gate oxide of a digital device does not exceed a breakdown voltage magnitude. The gate oxide protection circuit includes a plurality of transistors which turn OFF or ON when a node reaches a predetermined voltage of V.sub.refp +V.sub.t or V.sub.refn -V.sub.t, where V.sub.refp and V.sub.refn are reference applied at a gate of a PMOS or an NMOS transistor, and V.sub.t equals a threshold voltage of the MOS transistor.

REFERENCES:
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patent: 5539334 (1996-07-01), Clapp, III et al.
Nakagome, et al., Circuit Techniques for 1.5-3.6-V Battery-Operated 64-Mb DRAM, IEEE Journal of Solid-State Circuits, vol. 26, No. 7, Jul. 1991.

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