Gate oxide measurement apparatus

Details Gate oxide measurement apparatus Gate oxide measurement apparatus

2005-07-12

2005-07-12

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C438S018000, C257S048000, C257SE21521

Reexamination Certificate

active

06916671

ABSTRACT:
An apparatus for measuring a gate oxide thickness comprises a first active area, first to fifth wordlines, first and second bar-shaped trench capacitors, and first and second gate structures. The first active area with a width of at least 2F is disposed on a substrate. The first to fifth wordline is disposed on the substrate in a first direction, with a first predetermined space between each two wordlines, and first ends of the first to fifth wordlines are electrically connected. The first and second bar-shaped trench capacitors are disposed under the second and the fourth wordlines respectively with a second predetermined space between the first and second bar-shaped trench capacitors, and F is a minimum line width of the wordlines. The first and second gate structure are respectively disposed between the first bar-shaped trench capacitor and the second wordline and between the second bar-shaped trench capacitor and the fourth wordline.

REFERENCES:
patent: 6313480 (2001-11-01), Zatelli et al.
patent: 6465267 (2002-10-01), Wang et al.
patent: 6806102 (2004-10-01), Yamauchi
patent: 2003/0218473 (2003-11-01), Yamashita et al.

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