Gate material for semiconductor device fabrication

Details Gate material for semiconductor device fabrication Gate material for semiconductor device fabrication

2006-01-31

2006-01-31

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S150000, C438S198000, C438S938000, C257S347000, C257S350000, C257S351000

Reexamination Certificate

active

06991972

ABSTRACT:
In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal. Subsequently formed shallow sources and drains, therefore, are not affected by the gate annealing step.

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