Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-10-05
2008-10-21
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S356000, C257SE23080, C257SE29195, C257SE29328, C438S369000, C438S372000
Reexamination Certificate
active
07439591
ABSTRACT:
Method, apparatus, and article of manufacture for a diode defined by a portion of a gate layer of an integrated circuit. Illustrative, non-limiting embodiments of the invention are provided, including a temperature compensated DRAM, a temperature compensated CPU, a temperature compensated logic circuit and other on-chip temperature sensor applications.
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Infineon - Technologies AG
Nguyen Dao H
Patterson & Sheridan L.L.P.
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