Gate induced drain leakage current reduction by voltage...

Details Gate induced drain leakage current reduction by voltage... Gate induced drain leakage current reduction by voltage...

2008-04-15

2008-04-15

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S229000, C365S189090, C365S189110

Reexamination Certificate

active

11313650

ABSTRACT:
A semiconductor integrated circuit device and method for reducing gate induced leakage current associated with circuits of the semiconductor electrical device, such as a semiconductor integrated circuit memory device. During a standby mode, a voltage supplied to a plurality of circuits is reduced so as to reduce gate induced leakage (GIDL) current associated with said plurality of circuits. During time intervals while in the standby mode, the voltage supplied to a subset of said plurality of circuits is increased to a level necessary for a refresh function associated with said subset of said plurality of circuits and then it is reduced upon completion of said refresh function. In the example a semiconductor memory device, the circuits that are manipulated in this manner are wordline driver circuits. A cyclical self-refresh operation is provided to refresh the WLs associated with subsets of the wordline driver circuits to reduce the overall GIDL current associated with the plurality of wordline driver circuits.

REFERENCES:
patent: 6343045 (2002-01-01), Shau
patent: 6894917 (2005-05-01), Ting et al.
patent: 2004/0017720 (2004-01-01), Mori et al.
patent: 2004/0042305 (2004-03-01), Joo
patent: 2006/0114735 (2006-06-01), Takahashi
patent: 2007/0030738 (2007-02-01), Oh
patent: 2007/0040581 (2007-02-01), Chen
patent: 2007/0121406 (2007-05-01), Oh

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