Gate in semiconductor device and method of fabricating the same

Details Gate in semiconductor device and method of fabricating the same Gate in semiconductor device and method of fabricating the same

2008-12-30

2011-11-22

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S413000, C257SE29255, C257SE21473, C257SE21336, C257SE21294, C438S530000, C438S585000, C438S587000

Reexamination Certificate

active

08063453

ABSTRACT:
A gate of a semiconductor device includes a substrate, and a polysilicon layer over the substrate, wherein the polysilicon layer is doped with first conductive type impurities having a concentration that decreases when receding from the substrate and counter-doped with second conductive type impurities having a concentration that increases when receding from the substrate.

REFERENCES:
patent: 2002/0102796 (2002-08-01), Lee et al.
patent: 2003/0122203 (2003-07-01), Nishinohara et al.
patent: 2004/0238883 (2004-12-01), Nishinohara et al.
patent: 2006/0223252 (2006-10-01), Park et al.
patent: 2008/0122005 (2008-05-01), Horsky et al.
patent: 10-0267414 (2000-10-01), None
patent: 1020030001585 (2003-01-01), None
patent: 1020080088097 (2008-10-01), None
Korean Notice of Allowance dated May 27, 2011 for 10-2008-0097242, citing the above reference(s).

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