Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-11
2000-07-11
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
438592, H01L 2176
Patent
active
060877006
ABSTRACT:
A method of fabricating a gate having a barrier layer of titanium silicide is comprised of the steps of forming a layer of gate oxide. The gate oxide may be formed using a standard LOCOS process. A layer of doped polysilicon is deposited over the layer of gate oxide. A layer of titanium silicide is formed in a predetermined relationship with respect the layer of doped polysilicon, i.e., it may be deposited on top of the polysilicon or formed in a top surface of the polysilicon layer. A layer of tungsten silicide is deposited on top of the layer of titanium silicide. The layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide are etched to form the gate. A gate thus fabricated is also disclosed.
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Adler, E., M. Ishaq; "Process for Fabricating Field-Effect Transistors with Polysilicon Gates containing Metal Silicide"; IBm Technical Disclosure Bulletin; vol. 26, No. 5, Oct. 1983.
"Underlayer for Polycide Process"; IBM Technical Disclosure Bulletin; vol. 28, No. 5, Feb. 1986.
Chan Hiang C.
Fazan Pierre C.
Chaudhuri Olik
Micro)n Technology, Inc.
Weiss Howard
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