Gate electrodes and the formation thereof

Details Gate electrodes and the formation thereof Gate electrodes and the formation thereof

2004-01-29

2008-09-02

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S388000, C257SE21199, C257SE21622

Reexamination Certificate

active

07419905

ABSTRACT:
A method of fabricating a gate electrode for a semiconductor comprising the steps of: providing a substrate; providing on the substrate a layer of a first material of thickness tp, the first material being selected from the group consisting of Si, Si1-x—Gexalloy, Ge and mixtures thereof and a layer of metal of thickness tm; and annealing the layers, such that substantially all of the first material and the metal are consumed during reaction with one another.

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