Gate electrode structure for field emission devices and method o

Details Gate electrode structure for field emission devices and method o Gate electrode structure for field emission devices and method o

1998-02-10

2000-01-04

Niebling, John F.

Semiconductor device manufacturing: process

Electron emitter manufacture

445 24, 445 35, 445 47, 445 49, 445 50, 445 51, 313293, 313309, 313310, 313311, 313336, H01L 2100

Patent

active

060109181

ABSTRACT:
Field emission devices may include emitter wells formed in a body of dielectric material. A gate conductor may be provided along the upper surface of the dielectric material. A gate hole may be provided in the gate conductor directly above each of the emitter wells. A method for forming the gate holes and emitter wells is disclosed. The method includes the steps of providing a first gate conductor layer on a dielectric layer. A pattern of second gate conductor material may be formed over the first gate conductor layer, said pattern defining gate holes in the second gate conductor material. The gate holes may then be completed and emitter wells formed by etching through the first gate conductor layer and into the dielectric layer using an etch that selectively etches the first gate conductor layer and the dielectric layer, and does not etch substantially the second gate conductor material.

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