Gate electrode silicidation process

Details Gate electrode silicidation process Gate electrode silicidation process

2005-08-29

2009-11-24

Tran, Minh-Loan T (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S664000, C257S412000, C257SE29161, C257SE21199, C257SE21622

Reexamination Certificate

active

07622387

ABSTRACT:
A fully-silicided gate electrode is formed from silicon and a metal by depositing at least two layers of silicon with the metal layer therebetween. One of the silicon layers may be amorphous silicon whereas the other silicon layer may be polycrystalline silicon. The silicon between the metal layer and the gate dielectric may be deposited in two layers having different crystallinities. This process enables greater control to be exercised over the phase of the silicide resulting from this silicidation process.

REFERENCES:
patent: 6555453 (2003-04-01), Xiang et al.
patent: 2001/0003056 (2001-06-01), Hashimoto et al.
patent: 2002/0192932 (2002-12-01), Tsai et al.
patent: 2003/0143825 (2003-07-01), Matsuo et al.
patent: 2005/0130366 (2005-06-01), Lu
patent: 2005/0269635 (2005-12-01), Bojarczuk et al.
Zhao, Q. T., Full silicidation process for making CoSi2 on SiO2, Apr. 26, 2004, Applied Physics Letters, vol. 84 No. 17, pp. 3292-3293.
Zhang et al; “Self-Aligned Silicides for Ohmic Contacts in Complimentary Metal -Oxide-Semiconductor technology: TiSi2, CoSi2, and NiSi”; 2004 Journal of Vacuum Science and Technology.
Kedzierski et al; “Threshold Voltage Control in NiSi-gated MosFets Through SiiS”; 2005 IEEE Transactions on Electron Devices.
Wen et al; “Effect of Ni Thickness Dependence on NiSi FUSI Metal Gate Characteristics”; 2004 Electrochemical and Solid-State Letters.
Takahashi et al; “Dual Workfunction Ni-Silicide/HfSiON Gate Stacks by Phase-Controlled Full-Sificidation (PC-FUSI) Technique fro 45nm-node LSTP and LOP Devices”; 2004 IEDM Devices Meeting.
Zhao et al; “Full Silicidation Process for Making CoSi2 on SiO2”; 2004 Applied Physics Letters.

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