Gate electrode having a capping layer

Details Gate electrode having a capping layer Gate electrode having a capping layer

2011-03-29

2011-03-29

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255

Reexamination Certificate

active

07915694

ABSTRACT:
A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed.

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