Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-06-15
1995-05-16
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257364, 257412, 257655, 257755, 257757, 257764, H01L 2906, H01L 2978
Patent
active
054163528
ABSTRACT:
The invention relates to a semiconductor device having an electrode formed on an region ranging from its thin insulating film in an element forming region to its thick insulating film in an isolation region, and it is an object of the invention to provide a semiconductor device capable of improving dielectric strength of a thin insulating film under a electrode in the boundary region between a thin insulating film and a thick insulating film as well as improving the film quality of the thin insulating film. A semiconductor device according to the present invention comprises a thick insulating film partly formed on a semiconductor substrate, a thin insulating film formed on the semiconductor substrate adjacent to the thick insulating film, a first electrode layer composed of a semiconductor layer which is formed in a region ranging from the thin insulating film to the thick insulating film and has a higher resistance in a boundary region between the thin insulating film and the thick insulating film and a lower resistance except for the boundary region, and a second electrode layer formed on the first electrode layer.
REFERENCES:
patent: 4894689 (1990-01-01), Cooper, Jr. et al.
"Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O.sub.2 Oxidation", Shiraki, Japanese Journal of Applied Physics, vol. 14, No. 6, Jun., 1975, pp. 747-752.
Fujitsu Limited
Ngo Ngan V.
LandOfFree
Gate electrode formed on a region ranging from a gate insulating does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gate electrode formed on a region ranging from a gate insulating, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate electrode formed on a region ranging from a gate insulating will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-639911