Gate electrode for MOS transistors

Details Gate electrode for MOS transistors Gate electrode for MOS transistors

2005-06-07

2005-06-07

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257S072000, C257S410000, C257S413000, C438S305000, C438S682000, C438S775000

Reexamination Certificate

active

06902993

ABSTRACT:
In one embodiment, a gate of a transistor is formed by performing a first thermal treatment on a silicon layer, forming a metal stack over the silicon layer, and performing a second thermal treatment on the metal stack. The first thermal treatment may be a rapid thermal annealing step, while the second thermal treatment may be a rapid thermal nitridation step. The resulting gate exhibits relatively low interface contact resistance between the silicon layer and the metal stack, and may thus be advantageously employed in high-speed devices.

REFERENCES:
patent: 5710454 (1998-01-01), Wu
patent: 6251777 (2001-06-01), Jeng et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6500720 (2002-12-01), Kunikiyo
patent: 6509254 (2003-01-01), Matsumoto et al.
patent: 6514841 (2003-02-01), Kim et al.
patent: 6562730 (2003-05-01), Jeng
R. Malik, et al., “W/WN/Poly gate implementation for sub-130 nm vertical cell DRAM”: 2001 IEEE Symposium on VLSI Technology Digest of Technical Papers (2 pages).
Tanaka, Masayuki, et al., “Realization of High Performance Dual Gate DRAMs without Boron Penetration by Application of Terachlorosilane Silicon Nitride Films”; 2001 IEEE Symposium on VLSI Technology Digest of Technical Papers (2 pages).
I.S. Choi, et al., “Formation mechanism of the multilayered-structure barrier of WNx/SI(100)”; 2002 American Institute of Physics, pp. 4339-4341, Appl. Phys. Lett., vol. 80, No. 23.
Hee Han, et al., “Reaction barrier formation of W/poly-Si gate by NH3 rapid thermal annealing applicable to 0.15 μm CMOS Devices”; 2000 IEEE, pp. 67-69.

Affiliated with

Also associated with

Rating

Gate electrode for MOS transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate electrode for MOS transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate electrode for MOS transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3498525