Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-25
2005-01-25
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000
Reexamination Certificate
active
06847089
ABSTRACT:
An embodiment of the invention is an integrated circuit2having halo atoms12concentrated at a gate side of a channel region and impurity atoms14within the channel region. Another embodiment of the invention is a method of manufacturing an integrated circuit that includes the implantation of impurity atoms14into a semiconductor substrate11.
REFERENCES:
patent: 6436783 (2002-08-01), Ono et al.
H.H. Vuong, et al., “Influence of Fluorine Implant on Boron Diffusion: Determination of Process Modeling Parameters” J. Appl. Phys. 77 (7), Apr. 1, 1995, pp. 3056-3060.
Song Zhao, et al., “GIDL Simulation and Optimization for 0.13μm/1.5V Low Power CMOS Transistor Design” 2002 International Conference on Simulation of Semiconductor Processes and Devices, pp. 43-48.
Chakravarthi Srinivasan
Jain Amitabh
Pollack Gordon P.
Potla Suresh
Brady III W. James
Keagy Rose Alyssa
Pham Long
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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