Gate driver device for GTO thyristor

Details Gate driver device for GTO thyristor Gate driver device for GTO thyristor

1999-06-09

2000-12-19

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327440, 327443, 257147, H03K 1772

Patent

active

061632007

ABSTRACT:
In a gate driver device, cathode conductor 2, gate conductor 3, and positive and negative conductors 8 and 9 between the principal turn-on and turn-off capacitors and MOSFET switching elements Q11-Q1i and Q21-Q2j are disposed on a wide plate. A thin insulation layer is inserted between conductor 3 and conductors 8 and 9. Numerous chip-type ceramic capacitors C11-C1m and C21-C2n to be used as principal capacitors are arranged in rows in the space between conductor 2 and conductors 8 and 9. The gate voltage of switching elements Q11-Q1i is reduced exponentially by time constant circuit TC, and the leak inductance of transformer Thf is employed to smooth the charging current.

REFERENCES:
patent: 4767948 (1988-08-01), Marquardt
patent: 5237225 (1993-08-01), Gruning
patent: 5262691 (1993-11-01), Bailey et al.
patent: 5457416 (1995-10-01), Song et al.
patent: 5483192 (1996-01-01), Tai
patent: 5493247 (1996-02-01), Gruning

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