Gate critical dimension variation by use of ghost features

Details Gate critical dimension variation by use of ghost features Gate critical dimension variation by use of ghost features

2005-11-09

2009-08-04

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07569309

ABSTRACT:
According to various embodiments, the present teachings include various methods for forming a semiconductor device, computer readable medium for forming a semiconductor device, mask sets for forming a semiconductor device, and a semiconductor device made according to various methods. For example, a method can comprise forming a first feature and a second feature on a substrate by exposing a first mask to a first beam, wherein the second feature is disposed adjacent to the first feature, exposing a second mask to a second beam, and removing the second feature from the substrate.

REFERENCES:
patent: 6046792 (2000-04-01), Van Der Werf et al.
patent: 6709923 (2004-03-01), Chung
patent: 6792591 (2004-09-01), Shi et al.
patent: 6915505 (2005-07-01), Hsu et al.
patent: 2006/0259893 (2006-11-01), Fujimoto

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