Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-29
2008-04-29
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S317000, C438S252000, C438S211000, C438S201000, C327S143000, C327S347000
Reexamination Certificate
active
11360801
ABSTRACT:
An EPROM cell in a printhead control circuit for an inkjet printer, having exactly one polysilicon layer and a conductive layer disposed above the polysilicon layer, includes a control transistor and an EPROM transistor. The control and EPROM transistors each have floating gates comprising a portion of the polysilicon layer, and an electrical interconnection, comprising a portion of the conductive layer, interconnects the floating gate of the control transistor and the floating gate of the EPROM transistor.
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U.S.P.T.O. Office Action for U.S. Appl. No. 11/263,337, mailed Aug. 9, 2007 (5pp).
Claims as currently presented in U.S. Appl. No. 11/263,337 (4pp).
Jackson Jerome
Valentine Jami M
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