Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-20
1998-02-10
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257273, 257408, H01L 2976, H01L 2980, H01L 2994
Patent
active
057172412
ABSTRACT:
A gate controlled lateral bipolar junction transistor (GCLBJT) device for an integrated circuit and a method of fabrication thereof are provided. The GCLBJT resembles a merged field effect transistor and lateral bipolar transistor, i.e. a lateral bipolar transistor having base, emitter and collector terminals and a fourth terminal for controlling a gate electrode overlying an active base region. The device is operable as an electronically configurable lateral transistor. Advantageously a heavily doped buried layer provides a base electrode having a base contact which surrounds and encloses the collector. The surface region between emitter and collector is characterized by lightly doped regions adjacent and contiguous with the heavily doped emitter and collector, which effectively reduce the base width of the bipolar transistor and improve operation for analog applications.
REFERENCES:
patent: 4344081 (1982-08-01), Pao et al.
patent: 4669177 (1987-06-01), D'Arrigo et al.
patent: 4800415 (1989-01-01), Simmons et al.
patent: 5250826 (1993-10-01), Chang et al.
patent: 5498885 (1996-03-01), Deen et al.
Deen M. Jamal
Ilowski John
Kovacic Stephen J.
Kung William
Malhi Duljit S.
de Wilton Angela C.
Fahmy Wael
Northern Telecom Limited
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