Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-23
2006-05-23
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S331000
Reexamination Certificate
active
07049668
ABSTRACT:
A trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure includes crisscrossing trenches formed in a semiconductor substrate. The trenches include inner surfaces filled with conductive material which is electrically separated from the substrate by insulating material. The conductive material is in contact with an overlying first metal layer through a plurality of first contact openings formed in a first insulating layer which is sandwiched between the first metal layer and the trenches. The conductive material in the trenches and the first metal layer constitute the gate of the MOSFET structure. There is also a second metal layer in contact with a source layer formed in the substrate through a plurality of second contact openings formed in a second insulating layer which is sandwiched between the first metal layer and the second metal layer. The second metal layer and the source layer constitute the source of the MOSFET structure. As arranged, the gate and source of the MOSFET structure are connected through separate metal layers on the semiconductor substrate. Consequently, each metal layer maintains higher conductivity and thus faster frequency response. The semiconductor structure formed in accordance with the invention can also assume a higher packing density with lower power-on resistance.
REFERENCES:
patent: 4791462 (1988-12-01), Blanchard et al.
patent: 5034785 (1991-07-01), Blanchard
patent: 5298781 (1994-03-01), Cogan et al.
patent: 5614751 (1997-03-01), Yilmaz et al.
patent: 5665996 (1997-09-01), Williams et al.
patent: 5682048 (1997-10-01), Shinohara et al.
patent: 5750416 (1998-05-01), Hshieh et al.
patent: 5770514 (1998-06-01), Matsuda et al.
patent: 5894149 (1999-04-01), Uenishi et al.
patent: 5970344 (1999-10-01), Kubo et al.
patent: 5972741 (1999-10-01), Kubo et al.
patent: 5986304 (1999-11-01), Hshieh et al.
Alpha and Omega Semiconductor Ltd.
Lin Bo-In
Nadav Ori
LandOfFree
Gate contacting scheme of a trench MOSFET structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gate contacting scheme of a trench MOSFET structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate contacting scheme of a trench MOSFET structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3628640