Gate-contact structure to prevent contact metal penetration thro

Details Gate-contact structure to prevent contact metal penetration thro Gate-contact structure to prevent contact metal penetration thro

1997-01-31

1999-03-16

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257758, 257776, 257784, H01L 23485, H01L 2348

Patent

active

058834168

ABSTRACT:
The present invention discloses a power transistor disposed on a substrate. The power device includes a core cell area comprising a plurality of power transistor cells each having drain and a source. Each of the power transistor cells further having a polycrystalline silicon gate formed on the substrate as part of a polycrystalline silicon gate layer overlaying the substrate. The polycrystalline silicon gate layer includes a plurality of polycrystalline gate-layer-extension extending to gate contact areas for forming gate contacts with a contact metal disposed thereon. The power transistor further includes a plurality of contact-metal-resistant pad each includes a thick oxide pad disposed below the gate contact areas underneath the polycrystalline gate layer extension whereby the contact-metal resistant pads resists the contact metal from penetrating therethrough and short to the substrate disposed thereunder.

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