Gate CD trimming beyond photolithography

Details Gate CD trimming beyond photolithography Gate CD trimming beyond photolithography

2006-02-22

2008-10-21

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

C438S265000

Reexamination Certificate

active

07439106

ABSTRACT:
A semiconductor device is fabricated with a selected critical dimension. A gate dielectric layer is formed over a semiconductor body. A gate layer comprised of a conductive material, such as polysilicon, is formed over the gate dielectric layer. The gate layer is patterned to form a gate electrode having a first horizontal dimension. One or more growth-stripping operations are performed to reduce a critical dimension of the gate electrode to a second horizontal dimension, where the second horizontal dimension is less than the first horizontal dimension.

REFERENCES:
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patent: 6811956 (2004-11-01), Gabriel
patent: 2005/0167397 (2005-08-01), Chen et al.
patent: 2005/0287751 (2005-12-01), Mehrad et al.
patent: 2006/0003565 (2006-01-01), Sasaki

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