Gate array semiconductor integrated circuit device

Details Gate array semiconductor integrated circuit device Gate array semiconductor integrated circuit device

1995-12-29

1997-05-27

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257204, 257205, 257347, 257351, 257368, H01L 2710, H01L 2701, H01L 2976

Patent

active

056335245

ABSTRACT:
In order to improve a withstand voltage and implement a gate array SOI semiconductor integrated circuit device having a large gate width, a region consisting of end cells (49) is provided on each end of a region formed by repeatedly arranging basic cells (BC) consisting of both transistor regions (32, 33) in a first direction and while symmetrically arranging the same to be folded in a second direction. Both ends of a channel region of a PMOS transistor (42) are drawn out in the second direction to provide a P-type semiconductor layer just under a field shielding gate electrode (FG), and this semiconductor layer is drawn also in the first direction to be connected with a P-type semiconductor layer of the end cell (49). A first source potential is applied to a region (PBD) which is bonded with one of the P-type semiconductor layers. Also as to an NMOS transistor (41) which is adjacent through a field oxide film (FO), on the other hand, an N-type semiconductor layer is similarly provided so that this N-type semiconductor layer is also connected with that of the end cell (49). A second source potential is applied to a region (NBD).

REFERENCES:
patent: 5327000 (1994-07-01), Miyata et al.
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5495124 (1996-02-01), Terashima
1993 IEEE, IEDM, pp. 475-478, 1993, T. Iwamatsu, et al., "CAD-Compatible High-Speed CMOX/SIMOX Technology Using Field/Shield Isolation For 1M Gate Array".

Affiliated with

Also associated with

Rating

Gate array semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate array semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate array semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2331280