Gate array layout to accommodate multi-angle ion implantation

Details Gate array layout to accommodate multi-angle ion implantation Gate array layout to accommodate multi-angle ion implantation

1997-04-23

1999-08-10

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257203, 257206, 257255, H01L 27088, H01L 29772

Patent

active

059362855

ABSTRACT:
A transistor gate array includes an active transistor region (50a-50n) of transistor gates all oriented in a single direction. Surrounding the active transistor region on all four sides are input/output regions (52a-52d) each containing a row of input/output transistors. All of the I/O devices on all sides of the array are oriented in the same common direction, which is the same direction as the orientation of the active transistor in the active region. This arrangement allows the use of the benefits of high angle ion implantation with fewer ion implant steps. Where some of the transistors are oriented at right angles to others, as in the prior art, four separate directions of high angle ion implantation are required to avoid degradation of electrical properties. With all transistors, including those of the gate array and those of the input/output devices, all oriented in the same direction, only two directions high angle ion implantation are required.

REFERENCES:
patent: 3612960 (1971-10-01), Takeishi
patent: 4733288 (1988-03-01), Sato
patent: 4771012 (1988-09-01), Yabu et al.
patent: 4853757 (1989-08-01), Kuramitsu
patent: 5040035 (1991-08-01), Gabara et al.
patent: 5245208 (1993-09-01), Eimori
patent: 5459085 (1995-10-01), Pasen et al.

Affiliated with

Also associated with

Rating

Gate array layout to accommodate multi-angle ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate array layout to accommodate multi-angle ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate array layout to accommodate multi-angle ion implantation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1122490