Gate array driven by source voltages and electronic equipment us

Details Gate array driven by source voltages and electronic equipment us Gate array driven by source voltages and electronic equipment us

1996-03-27

1998-07-14

Wallace, Valencia Martia

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

257203, 257207, 257211, H01L 2710

Patent

active

057808813

ABSTRACT:
A gate array driven by a plurality of source voltages and an electronic equipment using such a gate array are provided. The gate array comprises a plurality of P-well regions and a plurality of N-well regions, all of which are formed in an internal cell region in a first direction and alternately arranged in a second direction perpendicular to the first direction on a semiconductor substrate. A plurality of first basic cells receive a first source voltage VDD1 through a first source wiring layer, these first basic cells being respectively formed on a pair of P-well and N-well regions. A plurality of second basic cells receive a second source voltage VDD2 through a second source wiring layer, these second basic cells being respectively formed on a pair of P-well and N-well regions. A voltage level shifter for shifting the voltage level between data voltages outputted from first and second basic cell trains is formed on an region containing at least three of the P-well and N-well regions. The voltage level shifter is connected to a wiring layer which connects between the first and second basic cell trains.

REFERENCES:
patent: 4890146 (1989-12-01), Williams et al.
patent: 5083178 (1992-01-01), Otsu
patent: 5225693 (1993-07-01), Hirayama
patent: 5347150 (1994-09-01), Sakai et al.
patent: 5420447 (1995-05-01), Waggoner
patent: 5545904 (1996-08-01), Orbach

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