1986-08-26
1988-05-17
James, Andrew J.
357 68, H01L 2702
Patent
active
047454539
ABSTRACT:
A semiconductor device has P-type semiconductor body, a plurality of N-type wells formed in a surface area of the semiconductor body, and potential setting member for setting the potentials of the wells. This member has an N.sup.+ -type layer formed in the semiconductor body in contact with bottom surfaces of the wells, and an electrode formed on one of the wells.
REFERENCES:
patent: 4528581 (1985-07-01), Lee
IBM Technical Disclosure Bulletin, vol. 8, #12, pp. 1843-1844, May 1966.
IBM Technical Disclosure Bulletin, vol. 14, #6, Nov. 1971, p. 1682.
Patent Abstracts of Japan, E-79, 24, Oct. 1981.
James Andrew J.
Kabushiki Kaisha Toshiba
Prenty Mark
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