Gate all around thin film transistor

Details Gate all around thin film transistor Gate all around thin film transistor

1994-09-14

1996-12-10

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257352, 257365, 257401, H01L 2701

Patent

active

055833624

ABSTRACT:
A semiconductor device having at least one transistor having a channel member spaced from a semiconductor substrate, an insulating film on the substrate, and a control electrode on the channel member covering the channel member. The control electrode forms a channel in each of two opposed surfaces of the channel member. The channel member is a polycrystalline semiconductor.

REFERENCES:
patent: 5308999 (1994-05-01), Gotou
patent: 5338959 (1994-08-01), Kim et al.
patent: 5396099 (1995-03-01), Kitajima
Colinge et al, "Silicon-On-Insulator `Gate-All-Around Device`", Electron Devices Society of IEEE, Dec. 1990, pp. 25.4.1-25-.4.4.

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