Gaseous process for selectively removing silicon nitride film

Details Gaseous process for selectively removing silicon nitride film Gaseous process for selectively removing silicon nitride film

1991-11-22

1994-01-18

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156643, 156646, 156657, H01L 2100

Patent

active

052797058

ABSTRACT:
A process for selectively removing a silicon nitride film from a silicon layer surface having both a silicon oxide film thereon, and a silicon nitride film, includes the steps of: preparing a gas including at least hydrogen fluoride vapor, and supplying the gas to the silicon layer surface while maintaining the temperature of the silicon layer surface within a predetermined range that is higher than that of the gas. The gas includes a predetermined oxidizing agent, for example, HNO.sub.3, O.sub.3, H.sub.2 O.sub.2, HClO, HClO.sub.3, HNO.sub.2, O.sub.2, H.sub.2 SO.sub.4, Cl.sub.2 or Br.sub.2. The temperature of the silicon layer surface is maintained at 10.degree. C. to 90.degree. C., preferably 15.degree. C. to 60.degree. C., more preferably 20.degree. C. to 45.degree. C. higher than the temperature of the gas.

REFERENCES:
patent: 4065479 (1986-08-01), Faith, Jr.
patent: 4793897 (1988-12-01), Dunfield et al.
"The Dry O.sub.x Process for Etching Silicon Dioxide"; Bersin et al.; Solid State Technology, 20(4); 78-80.
"8th Symposium on ULSI Ultraclean Technology-Submicron ULSI Process Technology"; Japan, pp. 200-201.
"Submicron ULSI Process Technology: Proceeding of Symposium on ULSI Ultraclean Technology", Japan, pp. 172-181.
"Etching of Thin SiO.sub.2 Layers using Wet HF Gas", P. A. M. Van Der Heide et al., Journal of Vacuum Science and Tech.; Part A, May 1989, pp. 1719-1723.
European Search Report dated Feb. 24, 1992.
N. Miki, H. Kikuyama, I. Kawanabe, M. Miyashita, T. Ohmi, "Gas-Phase Selective Etching of Native Oxide", IEEE Transactions on Electron Devices, vol. 37, Jan. 1990.

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