Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-05-12
1988-06-07
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
134 3, 134 33, 134157, 156653, 156657, 156662, 156345, 252 791, 252 793, B44C 122, C03C 1500, C03C 2506
Patent
active
047494409
ABSTRACT:
A process for removing at least a portion of a film from a substrate, such as a wafer of silicon or other similar materials, the film on the substrate typically being an oxide film, maintaining the atmosphere embracing the substrate at near room temperature and at near normal atmospheric pressure, flowing dry inert diluent gas over the substrate, introducing a flow of reactive gas, preferably an anhydrous hydrogen halide gas, namely anhydrous hydrogen flouride gas, for typically 5 to 30 seconds over the substrate and film to cause the removal of portions of the film, flowing water vapor laden inert gas, preferably nitrogen, over the substrate and film from a time prior to commencing flow of the reactive gas until flow of the reactive gas is terminated. In the case of non-hygroscopic film on the substrate, the flow of water vapor continues during the flow of the reactive gas and is terminated shortly after the termination of the flow of reactive gas. In the case of hygroscopic film, the flow of water vapor is discontinued prior to the start of flow of the reactive gas. In carrying out the process, a process chamber is needed to confine the substrate and have a vent, which though restricted, continuously open to the atmosphere.
REFERENCES:
patent: 3672980 (1972-06-01), Glendinning
patent: 3711324 (1973-07-01), Glendinning
patent: 3718503 (1973-02-01), Glendinning
patent: 3773578 (1973-11-01), Glendinning
patent: 3879597 (1975-04-01), Bersin et al.
patent: 3923568 (1975-12-01), Bersin
patent: 4127437 (1978-11-01), Bersin et al.
patent: 4148705 (1979-04-01), Battey et al.
patent: 4255229 (1981-03-01), Morcom
patent: 4264374 (1981-04-01), Beyer
patent: 4285800 (1981-08-01), Welty
patent: 4303467 (1981-12-01), Scornavacca
patent: 4313783 (1982-02-01), Davies
patent: 4389281 (1983-06-01), Anantha et al.
patent: 4415404 (1983-11-01), Riegl
patent: 4444605 (1984-04-01), Slawinski
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4467450 (1984-08-01), Kuo
patent: 4468283 (1984-08-01), Abmed
patent: 4490209 (1984-12-01), Hartman
patent: 4505949 (1985-03-01), Jelks
patent: 4605479 (1986-08-01), Faith
IBM Technical Disclosure Bulletin, vol. 19, No. 7, Dec. 1976, K. D. Beyer "Etching SiO.sub.2 in Gaseous HF/H.sub.2 " p. 2513.
IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, K. D. Beyer "Removal of Native Oxide Layer on a Semiconductor Surface", p. 2839.
Patents Abstracts of Japan, vol. 5, No. 159, Oct. 14, 1981, p. 831 & JP A, 56-88320, (FUJITSU), Jul. 17, 1981.
MaJun-Ru et al., "A New Conformal Dry-Etch Technique for Submicrometer Structures", J. Vac. Sci. Technol., 19(4), Nov. Dec. 1981, pp. 1385-1389.
Tyapkina et al., "Interaction of a Silicon Surface with Fluorine and Hydrogen Fluoride", Russian Journal of Physical Chem., U.D.C. 541 124/128, May 1966, pp. 573-576.
Arslambekov et al., "Reaction of Si with Gaseous HF", Izvest-Akademii Nauk SSSR, Neorganicheskie Materialy, vol. 12, No. 12, pp. 2124-2126, Dec. 1976, pp. 1737-1739.
Bersin et al., "The Dry Ox Process for Etching Silicon Dioxide", Solid State Technology, Apr. 1977, 20(4), pp. 78-80.
Abstract, Japan Kokai Tokyo Koho 79, 125, 143, Sep. 28, 1979.
Abstract, Japan Kokai Tokyo Koho 79, 125, 144, Sep. 28, 1979.
Beyer, "Silicon Surface Cleaning Process", IBM Technical Disclosure Bulletin," vol. 20, No. 5, Oct. 1977, pp. 1746-1747.
Inoue, "Etching of Germanium with Water Vapor", Japanese Journal of Applied Physics, vol. 11, No. 6, Aug. 1972, pp. 1147-1152.
Bhat et al., "Vapor-Phase Etching and Polishing of Gallium Arsenide Using Hydrogen Chloride Gas", J. Electrochem. Soc.: Solid State Science & Technology, vol. 122, No. 10, Oct. 1975, pp. 1378-1382.
Levin et al., "Electron Microscope Characterization of Defects on Gaseous-Etched Silicon Surfaces", J. Electrochem. Soc., vol. 118, No. 7, pp. 1171-1175.
Dismukes et al., "Gas-Phase Etching of Silicon with Chlorine", J. Electrochem. Soc., vol. 118, No. 4, pp. 634-635.
Lin et al., "Vapor Phase Etching of GaAs in the H.sub.2 --H.sub.2 O Flow System", J. Electrochem. Soc., vol. 117, No. 3, pp. 407-409.
Chu et al., "The Etching of Germanium with Water Vapor and Hydrogen Sulfide", J. Electrochem. Soc., vol. 116, No. 9, pp. 1261-1263.
Biggerstaff Rex L.
Blackwood Robert S.
Cleavelin C. Rinn
Clements L. Davis
FSI Corporation
Powell William A.
Texas Instruments Incorporated
LandOfFree
Gaseous process and apparatus for removing films from substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gaseous process and apparatus for removing films from substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gaseous process and apparatus for removing films from substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-842971