Gaseous plasma etching of aluminum and aluminum oxide

Details Gaseous plasma etching of aluminum and aluminum oxide Gaseous plasma etching of aluminum and aluminum oxide

1976-08-16

1977-06-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 156652, 156665, 156667, 204192E, 252 791, C23F 102

Patent

active

040309673

ABSTRACT:
Gaseous plasma etching of aluminum with conventional plasma etch gases has not hitherto been commercially possible due to a layer of aluminum oxide (Al.sub.2 O.sub.3) which forms on freshly prepared aluminum surfaces. By first plasma etching in the presence of a gaseous trihalide, preferably in a so-called "pancake" or radial-flow type reactor, the oxide layer is removed. Aluminum etching can then continue, either with or without plasma conditions, depending upon the etch gas used.

REFERENCES:
patent: 3436327 (1969-04-01), Shockley
patent: 3615956 (1971-10-01), Irving et al.
patent: 3975252 (1976-08-01), Fraser et al.
patent: 3985597 (1976-10-01), Zielinski

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