Gaseous etching process

Details Gaseous etching process Gaseous etching process

1985-04-26

1987-08-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437905, 156626, 156648, 156655, 156662, 252 791, 357 16, 357 42, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046891153

ABSTRACT:
A process is described for preparing III-V compound semiconductor devices (e.g., gallium arsenide devices) in which gaseous bromine or chlorine is used as an etch. This etch procedure provides highly uniform etching. High selectivity for etching gallium arsenide in the presence of gallium aluminum arsenide may be obtained by the addition of oxidant gas such as water vapor.

REFERENCES:
patent: 3923569 (1975-12-01), Ono et al.
patent: 4285763 (1981-08-01), Coldren
patent: 4397711 (1983-08-01), Donnelly et al.
patent: 4498953 (1985-02-01), Cook et al.

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