Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-03-15
2011-03-15
Vu, David (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S775000, C257SE21006
Reexamination Certificate
active
07906442
ABSTRACT:
A gas delivery apparatus comprises: a chamber surrounding a substrate to be processed; a showerhead disposed within the chamber; and gas supply means supplying a gas comprising a mixture of NH3and H2to the chamber, in which a coating layer deposited on the interior of the chamber and the showerhead contain nickel (Ni). When the apparatus is utilized to practice a method comprising exposing an object W to a gas comprising a mixture consisting of NH3and H2, the H2/NH3gas flow rate ratio and the temperature are controlled so that the reaction of nickel contained in the coating layer deposited on the interior of the chamber and the showerhead is suppressed.
REFERENCES:
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patent: 2003 313666 (2003-11-01), None
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Narushima Kensaku
Wakabayashi Satoshi
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Pathak Shantanu C
Tokyo Electron Limited
Vu David
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