Gas treatment apparatus and method

Details Gas treatment apparatus and method Gas treatment apparatus and method

1990-02-27

1990-11-13

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118723, 118730, 156646, 156345, C23C 1600

Patent

active

049694162

ABSTRACT:
Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so that the gas contacts be exposed from the face of the substrate. Preferably, a plurality of substrates are treated simultaneously, and the substrates serve as vanes to impel the gas into rotational motion, thereby pumping the gas through the process chamber. Preferably, the substrates are carried on susceptors having generally planar faces, the susceptors also serving as vanes impelling the gas into rotational motion. The gas may be a depositing gas for forming epitaxial layers on the faces of the substrates, or an etching gas.

REFERENCES:
patent: 4593644 (1986-06-01), Hanak
patent: 4694779 (1987-09-01), Hammond

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