Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-10-25
2009-08-11
Tran, Binh X (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S696000, C438S743000
Reexamination Certificate
active
07572733
ABSTRACT:
Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a sequence of at least three steps, wherein the sequence is repeated at least once. For example, the first step may result in a high etch rate of oxide (108) while the second step is a polymer coating steps and the third step results in a low etch rate of oxide and high etch rate of another material (114) and/or sputtering.
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patent: 2003/0211753 (2003-11-01), Nallan et al.
patent: 2004/0072430 (2004-04-01), Huang et al.
patent: 2006/0199370 (2006-09-01), Dai et al.
patent: 2007/0199922 (2007-08-01), Shen et al.
patent: 2007/0202700 (2007-08-01), Leucke et al.
Celii Francis
Jiang Ping
Brady III Wade J.
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Binh X
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