Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-02-05
2000-12-19
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438687, 438782, 204224, 204297, H01L 2144
Patent
active
061627267
ABSTRACT:
Gas shielding is employed to prevent metal plating on contacts during electroplating to reduce particulate contamination and increase thickness uniformity. In another embodiment, gas shielding is employed to prevent deposition on the backside and edges of a semiconductor wafer during plating.
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Advanced Micro Devices , Inc.
Berry Renee R.
Nelms David
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