Measuring and testing – Gas analysis – Detector detail
Reexamination Certificate
2007-12-20
2010-11-09
Fitzgerald, John (Department: 2856)
Measuring and testing
Gas analysis
Detector detail
Reexamination Certificate
active
07827852
ABSTRACT:
A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOxO2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.
REFERENCES:
patent: 4338281 (1982-07-01), Treitinger et al.
patent: 4569826 (1986-02-01), Shiratori et al.
patent: 5302935 (1994-04-01), Chatterjee
patent: 5546004 (1996-08-01), Schmelz
patent: 5627305 (1997-05-01), Yun et al.
patent: 5811662 (1998-09-01), Williams et al.
patent: 6012327 (2000-01-01), Seth et al.
patent: 6113859 (2000-09-01), Kim et al.
patent: 6774613 (2004-08-01), Becker et al.
patent: 6993955 (2006-02-01), King et al.
patent: 7017389 (2006-03-01), Gouma
patent: 7341694 (2008-03-01), Nishiyama et al.
patent: 7531136 (2009-05-01), Besnard et al.
patent: 2002/0146352 (2002-10-01), Wang et al.
patent: 2004/0132202 (2004-07-01), Nishiyama et al.
patent: 2004/0213701 (2004-10-01), Hattori et al.
patent: 2004/0248282 (2004-12-01), Sobha et al.
patent: 2005/0072213 (2005-04-01), Besnard et al.
patent: 2005/0167592 (2005-08-01), Moon et al.
patent: 2006/0091022 (2006-05-01), Ruud et al.
patent: 2006/0249384 (2006-11-01), Kim et al.
patent: 2006/0277974 (2006-12-01), Gouma et al.
patent: 2007/0281160 (2007-12-01), Krishna et al.
patent: 2008/0008625 (2008-01-01), Thomas et al.
patent: 2009/0159445 (2009-06-01), Krishna et al.
patent: 2009/0159447 (2009-06-01), Cui et al.
patent: 0046989 (1981-08-01), None
patent: 46989 (1982-03-01), None
patent: 0940673 (1999-09-01), None
patent: 0767905 (1999-12-01), None
patent: 1112486 (2000-02-01), None
patent: 1110081 (2003-03-01), None
patent: 1403637 (2004-03-01), None
patent: 1452855 (2004-09-01), None
patent: 1560008 (2005-08-01), None
patent: 1591776 (2005-11-01), None
patent: 2001343347 (2000-06-01), None
Lambert-Mauriat et al., “Density-functional study of oxygen vacancies in monoclinic tungsten oxide,” J. Phys.: Condens. Matter 18 (2006); pp. 7361-7371.
Penza et al., “Tungsten trioxide (WO3) sputtered thin films for a NOx gas sensor,” Sensor adn Actuators B 50 (1998), pp. 9-18.
Stankova et al., “Improvement of the Gas Sensing Properties of rf Sputtered WO3 Thin Films Using Different Dopants”, IEEE Explore, 2005, pp. 553-556.
Chung et al., “Gas Sensing Properties of WO3 , Thick Film for NO2 Gas Dependent on Process Condition”, Sensors and Actuators B 60 (1999) 49-56.
Ashraf et al., “The Gas-sensing Properties of WO3-x Thin Films Deposited Via the Atmospheric Pressure Chemical Vapour Deposition (APCVD) of WCI6 With Ethanol”, Measurement Science and Technology, 19 (2008) (9 pages).
Jimenez et al., “Gas Sensing Properties of Catalytically Modified WO3 With Copper and Vanadium for NH3 Detection”, IEEE Explore, 409-414.
Cui Jun
Hanumantha Ravikumar
Karavoor Geetha
Krishna Kalaga Murali
Lemmon John Patrick
Christian Joseph J.
Fitzgerald John
General Electric Company
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