Gas-phase silicon etching with bromine trifluoride

Details Gas-phase silicon etching with bromine trifluoride Gas-phase silicon etching with bromine trifluoride

1998-01-22

2000-12-19

Lund, Jeffrie R

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

216 2, 438719, C23F 100, C23F 300, H01L 21302

Patent

active

061623679

ABSTRACT:
An apparatus and method for gas-phase bromine trifluoride (BrF.sub.3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF.sub.3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.

REFERENCES:
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4498953 (1985-02-01), Cook et al.
patent: 4695700 (1987-09-01), Provence et al.
patent: 4749440 (1988-06-01), Blackwood et al.
D.E. Ibbotson, et al., "Plasmaless Dry Etching of Silicon with Fluorine-Containing Compounds"; J. Appl. Phys., Nov. 15, 1984; vol. 56, No. 10, pp. 2939-2942, sections II, III.B.2.

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