Gas-phase growth process

Coating processes – Electrical product produced – Welding electrode

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437241, B05D 306

Patent

active

047029366

ABSTRACT:
A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.

REFERENCES:
patent: 3200018 (1965-08-01), Grossman
patent: 4265932 (1981-05-01), Peters et al.
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4543271 (1985-09-01), Peters

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