Gas-phase growing method and apparatus for the method

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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4272551, 4272552, 427294, C23L 1600

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active

052309258

ABSTRACT:
A gas-phase growing apparatus is provided with a reaction furnace, and a substrate having a minute depression is placed inside the reaction furnace. In the reaction furnace, a reaction gas is supplied onto the substrate, so as to cause gas-phase growth of a layer of a reaction product within the depression of the substrate. The reaction gas is supplied such that the pressure in the reaction furnace is alternately changed between a first pressure and a second pressure. The first pressure is a pressure capable of producing a continuous or intermediate stream in which the collision between the molecules of the reaction gas is predominant, while the second pressure is a pressure lower than the first pressure. The gas-phase growing apparatus is also provided with a pipe for introducing the reaction gas into the reaction furnace, a valve for controlling the flow rate of the reaction gas, a pump for discharging the unconverted reaction gas from the reaction furnace, an orifice for providing flow resistance for the discharge side of the reaction furnace, a pressure meter for measuring the internal pressure of the reaction furnace, and an electromagnetic valve operating in association with the pressure meter.

REFERENCES:
patent: 3158499 (1964-11-01), Jenkin
patent: 4138818 (1979-01-01), Chappelow et al.
patent: 4960640 (1990-10-01), Paquette et al.
J. Van Suchtelen et al, The Pulse Reactor-A High-Efficiency, High-Precision Low-Pressure MOCVD Machine, Journal of Crystal Growth, vol. 93, pp. 201-206 (1988), North-Holland, Amsterdam.
Sasaki et al, F.C.C. Niobium Films Grown by Halide Chemical Vapour Deposition on Ultrasound-Vibrating Substrates, Thin Solid Films, vol. 158, pp. 123-131 (1988), The Netherlands.

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