Gas-phase etching and regrowth method for Group III-nitride crys

Details Gas-phase etching and regrowth method for Group III-nitride crys Gas-phase etching and regrowth method for Group III-nitride crys

1996-07-19

1998-09-29

Martin, Roland

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 37, 216 74, 216 77, 438694, 438715, 438717, B44C 122

Patent

active

058142398

ABSTRACT:
A gas-phase etchant is provided. The gas-phase etchant includes at least one halogen in gaseous form and/or at least one halogen halide in gaseous form. A Group III-nitride crystal is heated to a temperature in the range of 500.degree.-900.degree. C. and is etched in a flow of the gas-phase etchant. The gas-phase etchant may additionally include hydrogen. The gas-phase etchant may alternatively be diluted with inert gas, and the Group III-nitride crystal may be etched in a flow of the gas-phase etchant diluted with the inert gas.

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Masaki Nagahara et al., "Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrate by Metalorganic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. vol. 33, (1994), pp. 694-697.
H. Tsuchiya et al., "Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with GaAs Source Molecular Beam Epitaxy", Jpn. J. Appl. Phys., vol. 33, (1994) pp. 1747-1752.
K. Fuji et al., "Model for In-Situ Etching and Selective Epitaxy of AL.sub.x Ga.sub.1-.times. As with HCL Gas by Metalorganic Vapor Phase Epitaxy", J. Crystal Growth. vol. 145, (1994), pp. 277-282.
R.T. Leonard et al., Photoassisted Dry Etching of GaN, Appl Phys. Lett., vol. 68, Feb. 5, 1996, pp. 794-796.

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