Gas passivation on nitride encapsulated devices

Details Gas passivation on nitride encapsulated devices Gas passivation on nitride encapsulated devices

2005-06-21

2005-06-21

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

Reexamination Certificate

active

06908868

ABSTRACT:
A method for passivating at least interfaces between structures formed from a conductive or semiconductive material and adjacent dielectric structures so as to reduce a concentration of dangling silicon bonds at these interfaces and to reduce or eliminate the occurrence of unwanted voltage changes across the dielectric structures. The method includes exposing at least the interfaces to at least hydrogen species and forming an encapsulant layer that substantially contains the hydrogen species in the presence of the interfaces. The encapsulant layer substantially prevents the hydrogen species from escaping therethrough as processes that require temperatures of at least about 400° C. or of at least about 600° C. are conducted. Once such high temperature processes have been completed, portions of the encapsulant layer may be removed. Methods and systems for passivating semiconductor device structures are also disclosed, as are semiconductor device structures passivated according to the disclosed methods.

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