Gas mixture and method for anisotropic selective etch of nitride

Details Gas mixture and method for anisotropic selective etch of nitride Gas mixture and method for anisotropic selective etch of nitride

1988-02-19

1989-05-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 20419237, 252 791, 437241, B44C 122, C03C 1500, C03C 2506

Patent

active

048327875

ABSTRACT:
A gas mixture for use in the selective dry etching of a nitride insulator layer relative to an oxide insulator layer comprising: a gas mixture containing chlorine and oxygen. The oxygen in this gas mixture must comprise 15% or less by volume.
In a preferred process embodiment for ethcing Si.sub.3 N.sub.4 and leaving a layer of SiO.sub.2 therebelow, Cl.sub.2 gas may be used in combination with 12% or less oxygen by volume. Etch selectivity of greater than five to one is achieved with this gas mixture when a plasma RF frequency of less than 1 MHz is utilized. When a high frequency RF component in the range of 10-27 MHz is added to the RF excitation signal, then an etch uniformity of better than 3% is achieved.

REFERENCES:
patent: 3951709 (1976-04-01), Jacob
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4374698 (1983-02-01), Sanders et al.
patent: 4474642 (1984-10-01), Nakane et al.
Beinvogl et al., "Reactive Ion Etching of Polysilicon and Tantalum Silicide", Solid State Technology, Apr. 1983, pp. 125-130.

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