Gas jet reduction of iso-dense field thickness bias for...

Details Gas jet reduction of iso-dense field thickness bias for... Gas jet reduction of iso-dense field thickness bias for...

2005-10-19

2008-10-14

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C427S240000, C257SE21464

Reexamination Certificate

active

07435692

ABSTRACT:
A system and method affecting mass transport to reduce or eliminate iso-dense bias in spin-on-dielectric (SOD) or spin-on-glass (SOG) processes use a nozzle to dispense the liquid dielectric and a separate nozzle for jetting N2or other gas onto a semiconductor wafer. The gas is jetted onto the wafer shortly after spin-on-dielectric liquid is dispensed. The jetting of the gas in the spin-coating process increases the volumetric flow of the liquid coating material in the radial direction, which in turn reduces the field thickness above isolated or no patterned areas to that at the more densely patterned areas, thereby improving the uniformity of the spun-on dielectric thickness on the wafer.

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