Gas injection system for plasma processing

Details Gas injection system for plasma processing Gas injection system for plasma processing

1997-06-30

2000-01-11

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 216 68, 427569, H05H 100

Patent

active

060131551

ABSTRACT:
A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated. The arrangement minimizes clogging of the orifices since the orifices are located away from areas where most build-up of process byproducts occur on the injector tube.

REFERENCES:
patent: 4173661 (1979-11-01), Bourdon
patent: 4270999 (1981-06-01), Hassan et al.
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4614639 (1986-09-01), Hegedus
patent: 4691662 (1987-09-01), Roppel et al.
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 4877641 (1989-10-01), Dory
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4919745 (1990-04-01), Fukuta et al.
patent: 4943345 (1990-07-01), Asmussen et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4980204 (1990-12-01), Fujii et al.
patent: 4992301 (1991-02-01), Shishiguchi et al.
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5105761 (1992-04-01), Charlet et al.
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5164040 (1992-11-01), Eres et al.
patent: 5169509 (1992-12-01), Latz et al.
patent: 5192370 (1993-03-01), Oda et al.
patent: 5231334 (1993-07-01), Paranjpe
patent: 5252133 (1993-10-01), Miyazaki et al.
patent: 5262029 (1993-11-01), Erskine et al.
patent: 5267607 (1993-12-01), Wada
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5280154 (1994-01-01), Cuomo et al.
patent: 5290993 (1994-03-01), Kaji et al.
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5368710 (1994-11-01), Chen et al.
patent: 5384008 (1995-01-01), Sinha et al.
patent: 5399387 (1995-03-01), Law et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5405480 (1995-04-01), Benzing et al.
patent: 5415728 (1995-05-01), Hasegawa et al.
patent: 5498313 (1996-03-01), Bailey et al.
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5522936 (1996-06-01), Tamura
patent: 5525159 (1996-06-01), Hama et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5531834 (1996-07-01), Ishizuka et al.
patent: 5552124 (1996-09-01), Su
patent: 5556521 (1996-09-01), Ghanbari
patent: 5591268 (1997-01-01), Usui et al.
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5653806 (1997-08-01), Van Buskirk
"An Evaluation of Fluorine Doped Peteos on Gap Fill Ability and Film Characterization", by K. Hewes et al., Texas Instruments, Dallas, Texas (undated).
"Fundamentals, Etching, Deposition, and Surface Interactions", by Stephen M. Rossnagel et al., Handbook of Plasma Processing Technology, (1989), pp. 233-306.
"Electron cyclotron resonance microwave discharges for etching and thin-film deposition", by Jes Asmussen, J. Vac. Sci. Technol. A., vol. 7, No. 3, (May/Jun. 1989), pp. 883-893.
"Silicon Dioxide Films Produced by PECVD of TEOS and TMCTS", by D. Webb et al., 10439 Proceedings of the Int. Symp. on Ultra Large Scale Integration Science and Technology, (1989), No. 9, Pennington, NJ, pp. 571-585.
"Low-temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas", by T.V. Herak et al., J. Appl. Phys., 65(6), (Mar. 15, 1989), pp. 2457-2463.
"Reactive ion etching technology in thin-film-transistor processing", by Y. Kuo, IBM J. Res. Develop., vol. 36, No. 1, (Jan. 1992), pp. 69-75.
"Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition", by T. Fukada et al., Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, (1993), pp. 158-160.
"New approach to low temperature deposition of high-quality thin films by electron cyclotron resonance microwave plasmas", by T.T. Chau et al., J. Vac. Sci. Technol. B., vol. 10(5) (Sep./Oct. 1992), pp. 2170-2178.
"Silicon dioxide trench filling process in a radio-frequency hollow cathode reactor", by M. Gross et al., J. Vac. Sci. Technol. B., vol. 11(2), (Mar./Apr. 1993), pp. 242-248.
"Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films", by P. Shufflebotham et al., Materials Science Forum, Switzerland, vol. 140-142, (1993) pp. 255-268.
"Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition", by T. Fukada et al., Extended Abst. of the 1993 Intern. Conf. on Solid State Devices and Materials, (Feb. 21-22, 1995), pp. 43-49.
"High Density Plasma Deposition and Deep Submicron Gap Fill with Low Dielectric Constant SiOF Films", by L.Q. Qian et al., DUMIC Conference, (Feb. 21-22, 1995), 1995 ISMIC--101D/95/0050, pp. 50-56.
"Dual Frequency Plasma CVD Fluorosilicate Glass Water Absorption and Stability", by M.J. Shapiro et al.DUMIC Conference, (Feb. 21-22, 1995), 1994 ISMIC-101D/95/118, pp. 118-123.
"Comparison of PECVD F-TEOS Films and High Density Plasma SiOF Films", by D.C. Schuchmann et al., VMIC Conference, (Jun. 27-29, 1995), 1995 ISMIC-104/95/0097, pp. 97-103.
"Water-absorption mechanisms of F-doped PECVD SiO.sub.2 with low-dielectric constant", by H. Miyajima et al., VMIC Conference, (Jun. 27-29, 1995), 1995 ISMIC-104/95/0391, pp. 391-393.
"Controlling Fluorine Concentration and Thermal Annealing Effect on Liquid-Phase Deposited SiO.sub.2-x F.sub.x Films", by C.F. Yeh, J. of Electrochem. Soc., vol. 142, No. 10, (Oct. 1995), pp. 3579-3583.

Affiliated with

Also associated with

Rating

Gas injection system for plasma processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gas injection system for plasma processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas injection system for plasma processing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1459050