Gas injection system for CVD reactors

Details Gas injection system for CVD reactors Gas injection system for CVD reactors

1996-08-07

1997-08-05

Bueker, Richard

Coating apparatus

Gas or vapor deposition

118725, 156345, C23C 1600

Patent

active

056538081

ABSTRACT:
A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates reactant gases from the pressure chamber. The reactor also includes a gas injection system which injects process gas(es) into the reaction chamber in a somewhat vertical direction through a bottom surface of the reaction chamber. The gas injection system injects hydrogen or other appropriate gas in a vertical direction through the bottom surface of the reaction chamber. The flow of hydrogen or other appropriate gas is intermediate the flow of the process gas(es) and a surface of the reaction chamber, thereby re-directing the process gas flow parallel to the top surface of a wafer therein. In this manner, the reaction chamber does not require a long entry length for the process gas(es). This flow of hydrogen or other suitable gas also minimizes undesirable deposition on the surface of the reaction chamber.

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patent: 5062386 (1991-11-01), Christensen
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patent: 5269847 (1993-12-01), Anderson
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patent: 5551982 (1996-09-01), Anderson

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