Gas for removing deposit and removal method using same

Cleaning and liquid contact with solids – Processes – Hollow work – internal surface treatment

Reexamination Certificate

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Details

C134S001000, C134S001300, C134S037000, C216S058000, C438S706000, C438S710000, C438S905000, C252S079100, C252S079300

Reexamination Certificate

active

10705532

ABSTRACT:
The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1–100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.

REFERENCES:
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patent: 348980 (1990-01-01), None
patent: 08-291299 (1996-05-01), None
Patent Abstracts of Japan, abstract of JP 07-169756 published Jul. 4, 1995.
Patent Abstracts of Japan, abstract of JP 57-049234 published Mar. 23, 1982.
Patent Abstracts of Japan, abstract of JP 08-291299 published Nov. 5, 1996.

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