Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-07-31
1998-10-20
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438758, 216 68, 156345, 118723I, H05H 100
Patent
active
058246053
ABSTRACT:
A gas dispersion window for a plasma etching or plasma deposition reactor including a housing having a chamber in which an article can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to the chamber. A radiofrequency energy source is arranged to pass radiofrequency energy into the chamber and induce plasma in the interior of the chamber by activating, with an electric field induced by the radiofrequency energy source, process gas supplied to the chamber through the inlet port. A dielectric window formed by spaced apart first and second dielectric members has an inner surface thereof forming part of an inner wall of the chamber. Radiofrequency energy passes from the radiofrequency energy source to the interior of the chamber through the dielectric window. The process gas is supplied to the gap between the first and second dielectric members and passes inwardly into the chamber through gas dispersion holes in the second member.
REFERENCES:
patent: 4780169 (1988-10-01), Stark et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4960488 (1990-10-01), Law et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5198718 (1993-03-01), Davis et al.
patent: 5226967 (1993-07-01), Chen et al.
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5464476 (1995-11-01), Gibb et al.
patent: 5525159 (1996-06-01), Hama et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5531834 (1996-07-01), Ishizuka et al.
patent: 5540800 (1996-07-01), Qian
patent: 5580385 (1996-12-01), Paranjpe et al.
Chen Ching-Hwa
Christensen Mark J.
Liu David
Dang Thi
Lam Research Corporation
LandOfFree
Gas dispersion window for plasma apparatus and method of use the does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gas dispersion window for plasma apparatus and method of use the, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas dispersion window for plasma apparatus and method of use the will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-243977