Gas diffuser having varying thickness and nozzle density for sem

Details Gas diffuser having varying thickness and nozzle density for sem Gas diffuser having varying thickness and nozzle density for sem

1998-12-15

2000-09-05

Beck, Shrive

Coating apparatus

Gas or vapor deposition

156345, C23C 1600

Patent

active

061137006

ABSTRACT:
A gas diffuser for semiconductor device fabrication has the form of a hermetic cylinder with a hollow formed therein and is provided with a gas inlet opened upward for the gas to flow into the hollow, and a disk-shaped diffusion plate disposed in the lower side thereof with a plurality of nozzles to direct and control the stream of the gas pouring out of the hollow. The thickness of the diffusion plate increases with radial distance from the center thereof, such that lengths of the nozzles through which the gas passes also increase with radial distance from the center of the diffusion plate. A reaction furnace has the gas diffuser disposed in an upper portion thereof, and a support plate for supporting the wafer disposed in a lower portion thereof. The distance from the surface of the wafer to the diffusion plate of the gas diffuser is half the radius of the wafer.

REFERENCES:
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5439524 (1995-08-01), Cain et al.
patent: 5990016 (1999-11-01), Kim et al.

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